22 September 1987 Small Signal Amplification In Semiconductor Lasers
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Proceedings Volume 0800, Novel Optoelectronic Devices; (1987) https://doi.org/10.1117/12.941206
Event: Fourth International Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, The Hague, Netherlands
Abstract
The dynamical behaviour of semiconductor lasers is investigated at or near a Hopf bifurcation in order to characterise the small-signal amplification properties of the device. The work is discussed within the context of finding practical applications for non-linear dynamical phenomena.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. A. Shore, K. A. Shore, } "Small Signal Amplification In Semiconductor Lasers", Proc. SPIE 0800, Novel Optoelectronic Devices, (22 September 1987); doi: 10.1117/12.941206; https://doi.org/10.1117/12.941206
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