22 September 1987 Small Signal Amplification In Semiconductor Lasers
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Proceedings Volume 0800, Novel Optoelectronic Devices; (1987) https://doi.org/10.1117/12.941206
Event: Fourth International Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, The Hague, Netherlands
Abstract
The dynamical behaviour of semiconductor lasers is investigated at or near a Hopf bifurcation in order to characterise the small-signal amplification properties of the device. The work is discussed within the context of finding practical applications for non-linear dynamical phenomena.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. A. Shore, K. A. Shore, "Small Signal Amplification In Semiconductor Lasers", Proc. SPIE 0800, Novel Optoelectronic Devices, (22 September 1987); doi: 10.1117/12.941206; https://doi.org/10.1117/12.941206
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