22 September 1987 State of the arts of GaxIn1-xAsyP 1-y-InP laser grown By Low-Pressure Metalorganic Chemical Vapor Deposition
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Proceedings Volume 0800, Novel Optoelectronic Devices; (1987) https://doi.org/10.1117/12.941180
Event: Fourth International Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, The Hague, Netherlands
Abstract
Very high quality GaxIn1-xAsyP1-y (0 < x < 0.47, 0 < y < 1) lattice matched to InP heterojunctions, quantum-wells, and superlattices has been grown by the low pressure metal-organic chemical vapor deposition growth technique. High quality GaInAsP-InP double heterojunction lasers emitting at 1.3 μm and 1.55 μm have been fabricated with threshold current density as low as 430 A/cm2 and 500 Å/cm2, respectively, for a cavity length of 400 μm. Room temperature CW threshold current as low as 6 mA, 8 mA and 12 mA have been measured (for stripe buried devices with cavity length of 300 μm and stripe width of 1 μm) for 1.3 μm, 1.5 μm and 1.55 μm DEB laser, respectively. Phase-locked high power laser arrays of GaInAsP-InP emitting at 1.3 μm have been fabricated with material grown by two step low pressure metalorganic chemical vapor deposition.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Razeghi, M. Razeghi, F. Omnes, F. Omnes, P. Maurel, P. Maurel, R. Blondeau, R. Blondeau, M. Krakowski, M. Krakowski, } "State of the arts of GaxIn1-xAsyP 1-y-InP laser grown By Low-Pressure Metalorganic Chemical Vapor Deposition", Proc. SPIE 0800, Novel Optoelectronic Devices, (22 September 1987); doi: 10.1117/12.941180; https://doi.org/10.1117/12.941180
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