Paper
10 September 1987 Infrared Detector Based On An Integrated Silicon Thermopile
P. M. Sarro, A. W.V Herwaarden
Author Affiliations +
Proceedings Volume 0807, Passive Infrared Systems and Technology; (1987) https://doi.org/10.1117/12.941446
Event: Fourth International Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, The Hague, Netherlands
Abstract
A new thermal infrared detector fabricated using standard silicon IC technology and silicon micromachining is presented. The device consists of a 10-micron thick cantilever beam with one half covered by an absorbing layer and the other half containing a 44-strip p-Si/Al thermopile. The detectors have a responsivity (in vacuum) of 10 V/W and a relative detectivity D*, measured in air and for a 500 K blackbody source, of approximately 5 x 107 cmHzi/W.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. M. Sarro and A. W.V Herwaarden "Infrared Detector Based On An Integrated Silicon Thermopile", Proc. SPIE 0807, Passive Infrared Systems and Technology, (10 September 1987); https://doi.org/10.1117/12.941446
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Cited by 7 scholarly publications.
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KEYWORDS
Sensors

Silicon

Black bodies

Infrared detectors

Infrared technology

Etching

Semiconducting wafers

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