10 September 1987 Infrared Detector Based On An Integrated Silicon Thermopile
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Proceedings Volume 0807, Passive Infrared Systems and Technology; (1987) https://doi.org/10.1117/12.941446
Event: Fourth International Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, The Hague, Netherlands
A new thermal infrared detector fabricated using standard silicon IC technology and silicon micromachining is presented. The device consists of a 10-micron thick cantilever beam with one half covered by an absorbing layer and the other half containing a 44-strip p-Si/Al thermopile. The detectors have a responsivity (in vacuum) of 10 V/W and a relative detectivity D*, measured in air and for a 500 K blackbody source, of approximately 5 x 107 cmHzi/W.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. M. Sarro, P. M. Sarro, A. W.V Herwaarden, A. W.V Herwaarden, } "Infrared Detector Based On An Integrated Silicon Thermopile", Proc. SPIE 0807, Passive Infrared Systems and Technology, (10 September 1987); doi: 10.1117/12.941446; https://doi.org/10.1117/12.941446


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