17 September 1987 Characterization Of A New Organosilicon Photoresist
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Proceedings Volume 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection; (1987); doi: 10.1117/12.975611
Event: Fourth International Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, The Hague, Netherlands
Abstract
For a number of years, there has been great interest in organometallic based photoresists for use as the top layer in multilevel resist schemes. In general, bilevel approaches to lithography are forced upon the industry as a means of planarizing topography for a subsequent patterning step. This pattern is initially defined by exposure and development of a thin top layer (0.3 to 0.5um) over the thicker bottom layer (1.0 to 2.0um). In a conventional bilevel approach, the chosen bottom layer is photoactive at a wavelength for which the top is relatively opaque. The top level acts as a portable conformable mask (PCM) for image transfer through the bottom layer after its exposure and wet development. By using a silicon containing photoresist on the top image transfer may be accomplished using an oxygen plasma instead of a second exposure and development. The PCM in this case acts as an etch mask by forming a silicon dioxide crust in the plasma which slows the etch rate of the top versus the bottom layer. A generic curve of etch rate of a photoresist versus percent pilicon by weight is shown in Figure 2. The shape is similar over a wide range of organos il icon polymers.
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Wells C. Cunningham, Janet C. McFarland, Chan-Eon Park, "Characterization Of A New Organosilicon Photoresist", Proc. SPIE 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection, (17 September 1987); doi: 10.1117/12.975611; https://doi.org/10.1117/12.975611
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KEYWORDS
Silicon

Polymers

Etching

Photoresist materials

Picture Archiving and Communication System

Plasma

Photoresist developing

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