17 September 1987 Positive Near-UV Resist For Bilayer Lithography
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Proceedings Volume 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection; (1987) https://doi.org/10.1117/12.975609
Event: Fourth International Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, The Hague, Netherlands
Abstract
A novel alkaline-soluble silicon-containing copolymer for use in bilayer lithography has been developed. This copolymer (CVPVS)consists of p-vinylphenol and vinyltrimethylsilane and was prepared in a two-step process: anionic polymerization of a p-alkoxystyrene with vinyltrimethylsilane followed by ether cleavage of the alkoxy group. The copo-lymer used for lithographic application has a number average molecular weight of 2700 and shows very good solubility in a variety of organic solvents. CVPVS has nearly no absorption above 300 nm and at 248 nm its absorption is six times lower than that of a commercially available poly(p-vinylphenol). The silicon-containing photoresist (SPR) prepared from this copolymer and a diazoquinone photosensitizer is completely compatible with current resist processing.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. Sezi, R. Leuschner, c. Nolscher, D. Stephani, "Positive Near-UV Resist For Bilayer Lithography", Proc. SPIE 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection, (17 September 1987); doi: 10.1117/12.975609; https://doi.org/10.1117/12.975609
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