17 September 1987 Prediction Of Shelf-Lives Of Positive Photoresists Based On Accelerated Aging Techniques Kinetic Evaluation Of Various Parameters
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Proceedings Volume 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection; (1987) https://doi.org/10.1117/12.975601
Event: Fourth International Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, The Hague, Netherlands
Abstract
An overview of a model for aging of positive photoresists is presented. Photoresist samples were held at different temperatures for varying periods of time. Physical and spectral properties were monitored to determine rates of change as a function of temperature. Since the resists contain photoactive diazonaphthoquinones, which slowly decompose when heated, photospeed and nitrogen evolution were measured to obtain information about the decomposition rates of the photoactive compounds. Kinetics of change of coating thickness, viscosity, contrast, unexposed thickness loss, Dill parameters, and CO2 evolution were also determined to better understand the aging process in resists.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Wijbenga, G. Wijbenga, M. S. Chen, M. S. Chen, S. A. Fine, S. A. Fine, } "Prediction Of Shelf-Lives Of Positive Photoresists Based On Accelerated Aging Techniques Kinetic Evaluation Of Various Parameters", Proc. SPIE 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection, (17 September 1987); doi: 10.1117/12.975601; https://doi.org/10.1117/12.975601
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