17 September 1987 Reactive Ion Etching Of Silicon Dioxide
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Proceedings Volume 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection; (1987) https://doi.org/10.1117/12.975614
Event: Fourth International Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, The Hague, Netherlands
Abstract
The etch rates of thermally grown and CVD-deposited silicon dioxide were studied in three different reactive ion etch reactors, parallel plate, hexode and single wafer. Carbon-fluorine chemistry was used, and each reactor operated at 13.56 MHz. Assuming the etch rate to be a linear function of the DC bias and using an empirical relationship between bias and the ratio of pressure to power, a good correlation for the rate in each reactor was obtained. In addition, it was found that by plotting a normalized etch rate against the pressure to power ratio, data from all three reactors, as well as other data reported in the literature, could be correlated by a single line for each oxide.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter C. Sukanek, Glynis Sullivan, "Reactive Ion Etching Of Silicon Dioxide", Proc. SPIE 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection, (17 September 1987); doi: 10.1117/12.975614; https://doi.org/10.1117/12.975614
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