17 September 1987 Reactive Ion Etching Of Silicon Dioxide
Author Affiliations +
Proceedings Volume 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection; (1987) https://doi.org/10.1117/12.975614
Event: Fourth International Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, The Hague, Netherlands
Abstract
The etch rates of thermally grown and CVD-deposited silicon dioxide were studied in three different reactive ion etch reactors, parallel plate, hexode and single wafer. Carbon-fluorine chemistry was used, and each reactor operated at 13.56 MHz. Assuming the etch rate to be a linear function of the DC bias and using an empirical relationship between bias and the ratio of pressure to power, a good correlation for the rate in each reactor was obtained. In addition, it was found that by plotting a normalized etch rate against the pressure to power ratio, data from all three reactors, as well as other data reported in the literature, could be correlated by a single line for each oxide.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter C. Sukanek, Peter C. Sukanek, Glynis Sullivan, Glynis Sullivan, } "Reactive Ion Etching Of Silicon Dioxide", Proc. SPIE 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection, (17 September 1987); doi: 10.1117/12.975614; https://doi.org/10.1117/12.975614
PROCEEDINGS
5 PAGES


SHARE
RELATED CONTENT


Back to Top