17 September 1987 Submicron Optical Lithography With High Resolution I-Line Lens
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Proceedings Volume 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection; (1987) https://doi.org/10.1117/12.975594
Event: Fourth International Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, The Hague, Netherlands
Abstract
This paper reports about a submicron optical lithography based on the Zeiss i-line lens 10-78-48 which has a superior resolution due to a high numerical aperture of 0.42 and reduced wavelength of exposure. The first prototype of this lens has been incorporated into a GCA DSW-6300 waferstepper and was extensively used in a CMOS process with 0.8-μm-technology. Problems of this first application of i-line lithography are the main subject of this paper emphasizing the vanishing margin of depth of focus and the interference of i-line aerial image with standard g-line resists. A characterization of the lens performance is presented as well as a summary of our experiences with low absorbing photoresists which are better adapted to i-line exposure.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. Sebastian, L. Sebastian, N. Lehner, N. Lehner, F. Bieringer, F. Bieringer, W. Arden, W. Arden, } "Submicron Optical Lithography With High Resolution I-Line Lens", Proc. SPIE 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection, (17 September 1987); doi: 10.1117/12.975594; https://doi.org/10.1117/12.975594
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