High Spatial Resolution HgCdTe Photoconductors With Optical Masks

N. Oda; K. Miyamoto; T. Yamagata

doi:10.1117/12.941815

10 November 1987 High Spatial Resolution HgCdTe Photoconductors With Optical Masks

N. Oda, K. Miyamoto, T. Yamagata

Proceedings Volume 0819, Infrared Technology XIII; (1987) https://doi.org/10.1117/12.941815
Event: 31st Annual Technical Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, San Diego, CA, United States

Abstract

0.1eV HgCdTe photoconductive detectors with optical masks have been developed to improve spatial resolution and sensitivity. Measurements on carrier lifetime, responsivity and noise were made for the newly developed detectors as well as ordinary ones. The following results were obtained. (1) Measured responsivity for the new detectors was 2-3 times as high as that for the ordinary ones. (2) NEP for the new detectors showed better performance in wide bias current range. Finally, calculations on carrier lifetime, responsivity and noise were carried out by solving a 3-dim. transport equation. The calculated values agreed well with the measurements.

Citation Download Citation

N. Oda, K. Miyamoto, and T. Yamagata "High Spatial Resolution HgCdTe Photoconductors With Optical Masks", Proc. SPIE 0819, Infrared Technology XIII, (10 November 1987); https://doi.org/10.1117/12.941815

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