Fourier Transform Photoluminescence Analysis Of Semiconductor Materials

W. M. Duncan; M. L. Eastwood

doi:10.1117/12.941951

19 January 1988 Fourier Transform Photoluminescence Analysis Of Semiconductor Materials

W. M. Duncan, M. L. Eastwood

Proceedings Volume 0822, Raman and Luminescence Spectroscopy in Technology; (1988) https://doi.org/10.1117/12.941951
Event: 31st Annual Technical Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, San Diego, CA, United States

Abstract

In this paper we describe Fourier Transform Photoluminescence (FTPL) spectroscopy and discuss its application to three semiconductor systems: (i) indirect wide band gap silicon, (ii) direct wide band gap GaAs and (iii) direct narrow band gap semiconductors. Included in the discussion of each of these systems is background work carried out using conventional photoluminescence spectroscopy as well as new results from FTPL spectroscopy. Results from studies of semiconductor silicon are presented for quantitative trace impurity analysis and for analysis of processing induced microdefects. Application of FTPL to GaAs includes the identification of shallow impurities, defects and transition metal impurities. Finally, results from FTPL spectroscopic studies of InAs and InSb are presented to demonstrate the applicability of the method to narrow gap materials.

Citation Download Citation

W. M. Duncan and M. L. Eastwood "Fourier Transform Photoluminescence Analysis Of Semiconductor Materials", Proc. SPIE 0822, Raman and Luminescence Spectroscopy in Technology, (19 January 1988); https://doi.org/10.1117/12.941951

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