19 January 1988 Raman Spectroscopic Study Of Point Defects In Bulk GaAs
Author Affiliations +
Abstract
Raman scattering with below-band-gap light has been used to study residual extrinsic acceptors as well as the intrinsic 78/203 meV double acceptor in bulk GaAs. Both electronic and vi-bronic excitations of these defects are observed in the low-temperature Raman spectrum. Electronic scattering of extrinsic acceptors - namely carbon and zinc - in semi-insulating material provides a quantitative tool for materials characterization with a detection limit of < 5 x 1014 acceptors/cm3. Polarized Raman spectra give insight into the electronic structure of the 78/203 meV acceptor.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Wagner, J. Wagner, M. Ramsteiner, M. Ramsteiner, H. Seelewind, H. Seelewind, } "Raman Spectroscopic Study Of Point Defects In Bulk GaAs", Proc. SPIE 0822, Raman and Luminescence Spectroscopy in Technology, (19 January 1988); doi: 10.1117/12.941928; https://doi.org/10.1117/12.941928
PROCEEDINGS
6 PAGES


SHARE
Back to Top