Raman Spectroscopy Applied To The Characterization Of Semiconductors And Semiconductor Microstructures

M. Cardona

doi:10.1117/12.941927

19 January 1988 Raman Spectroscopy Applied To The Characterization Of Semiconductors And Semiconductor Microstructures

M. Cardona

Proceedings Volume 0822, Raman and Luminescence Spectroscopy in Technology; (1988) https://doi.org/10.1117/12.941927
Event: 31st Annual Technical Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, San Diego, CA, United States

Abstract

The inelastic scattering of light was discovered by Ramanl and, independently, by Landsberg and Madelstam2 after theoretical predictions by Brillouin3 and Smekal. Today, we call Brillouinscattering the scattering of light by long wavelength acoustic phonons (frequency < 10 cm-1) while the term "Raman" is reserved for scattering by optical phonons or by a number of other elementary excitations (magnons, plasmons,electron-hole excitations, polaritons ...) with typical frequencies between 10 and 5000 cm-1.

Citation Download Citation

M. Cardona "Raman Spectroscopy Applied To The Characterization Of Semiconductors And Semiconductor Microstructures", Proc. SPIE 0822, Raman and Luminescence Spectroscopy in Technology, (19 January 1988); https://doi.org/10.1117/12.941927

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