12 November 1987 Interface States And Fermi Level Pinning In CdSe Thin Film Solar Cells
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Abstract
Polycrystalline n-CdSe MIS solar cells have been produced and investigated by I-U measurements and admittance spectroscopy. A high density of interface states (≥ 1013 cm-2(eV)-1) has been estimated, pos-sibly due to disorder phenomena at the n-CdSe surface.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Richter, H. Richter, } "Interface States And Fermi Level Pinning In CdSe Thin Film Solar Cells", Proc. SPIE 0823, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion VI, (12 November 1987); doi: 10.1117/12.941916; https://doi.org/10.1117/12.941916
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