12 November 1987 Interface States And Fermi Level Pinning In CdSe Thin Film Solar Cells
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Abstract
Polycrystalline n-CdSe MIS solar cells have been produced and investigated by I-U measurements and admittance spectroscopy. A high density of interface states (≥ 1013 cm-2(eV)-1) has been estimated, pos-sibly due to disorder phenomena at the n-CdSe surface.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. Richter, H. Richter, "Interface States And Fermi Level Pinning In CdSe Thin Film Solar Cells", Proc. SPIE 0823, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion VI, (12 November 1987); doi: 10.1117/12.941916; https://doi.org/10.1117/12.941916
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