9 August 1988 Grazing Incidence Reflectance Of SiC Films Produced By Plasma-Assisted Chemical Vapor Deposition
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Abstract
The grazing incidence reflectance of silicon carbide films produced by plasma-assisted chemical vapor deposition has been evaluated in the spectral region from 256 to 1216 Å. The results show that reflectivities higher than conventional coatings can be obtained on coatings deposited both on silicon wafers and quartz substrates. Potential application of silicon carbide films for EUV astronomical instruments will be discussed.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ritva A. M. Keski-Kuha, Ritva A. M. Keski-Kuha, John F. Osantowski, John F. Osantowski, Albert R. Toft, Albert R. Toft, William D. Partlow, William D. Partlow, "Grazing Incidence Reflectance Of SiC Films Produced By Plasma-Assisted Chemical Vapor Deposition", Proc. SPIE 0830, Grazing Incidence Optics for Astronomical and Laboratory Applications, (9 August 1988); doi: 10.1117/12.942196; https://doi.org/10.1117/12.942196
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