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4 February 1988 Plasma X-Ray Sources For Lithography Generated By A 0.5 J KrF Laser
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Abstract
Laser-plasma X-ray sources suitable for lithography with silicon-substrate masks are generated by focusing 2a low energy, repetitive, commercial KrF laser onto targets at irradiances 101N/cm2. Conversion efficiency to X-rays at hv m 1 keV has been measured as a function of target irradiance and target atomic number. The best quantitatively measured conversion efficiency of 0.3% is obtained using a Ni target (Z = 28). A repetitive (2Hz) Ag target X-ray source is used to demonstrate microlithography by printing 0.5 pm lines and spaces into EBR-9 resist.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
F O'Neill, G M Davis, M C Gower, I C E Turcu, M Lawless, and M Williams "Plasma X-Ray Sources For Lithography Generated By A 0.5 J KrF Laser", Proc. SPIE 0831, X-Rays from Laser Plasmas, (4 February 1988); https://doi.org/10.1117/12.965042
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