In this paper the characteristics of He implanted stripe otpical waveguides are discussed in relation to the various process parameters. The results show that by careful selection of the energy used for the wall implants, stripe waveguides can be produced with propagation losses down to 1.0dB cm-1 at A = 0.633μm. The electrooptic coefficient in these waveguides has been measured using a simple phase modulator and it has yielded values which are 80% of the theoretical value for the r13 electrooptic coefficient of LiNb03. Experiments have also shown the intensity photoractive effects, which are routinely found in Ti indiffused waveguides, are not present here. The results presented are discussed in terms of the structure of the guides and the various process parameters.