10 March 1988 Low Loss Optical Waveguides By Direct Ti Ion Implantation In LiNbO3
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Proceedings Volume 0835, Integrated Optical Circuit Engineering V; (1988) https://doi.org/10.1117/12.942341
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States
The maximum Ti concentration and corresponding An as well as the minimum waveguide size is limited in diffused waveguides by the diffusion coefficient. Ion implantation offers an interesting alternative with a clear advantage at larger wavelengths for smaller waveguide cross-sections. Both planar and channel waveguides have been fabricated by ion implantation of Ti into a LiNb03 substrate. A solid phase epitaxial regrowth of the implant induced crystal damage resulted in excellent waveguides with propagation losses of< 1 db/cm. Guide depth of <1 micron and An of 0.04 have been achieved. Fabrication techniques and optical properties of the waveguides are presented.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul R. Ashley, Paul R. Ashley, Chris Buchal, Chris Buchal, } "Low Loss Optical Waveguides By Direct Ti Ion Implantation In LiNbO3", Proc. SPIE 0835, Integrated Optical Circuit Engineering V, (10 March 1988); doi: 10.1117/12.942341; https://doi.org/10.1117/12.942341

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