10 March 1988 Monolithically Integrated Photodiode And Preamplifier For Wide-Band Fiber Optic Links
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Proceedings Volume 0835, Integrated Optical Circuit Engineering V; (1988) https://doi.org/10.1117/12.942366
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States
Abstract
A monolithic integration of InGaAs PIN photodiodes and InP junction field-effect transistors has been demonstrated. The photodiodes show a frequency response beyond 22GHz with a quiantum efficiency of 65%. The FETs have a transconductance of 35mS/mm, a leakage current of less than lOnA/mm and a gate capacitance of less than 0.7pF/mm. The cut-off frequency of the FETs is estimated to be 7GHz. The receiver sensitivity is calculated to be -33dBm at 2 GHz.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Fan, P. K.L. Yu, "Monolithically Integrated Photodiode And Preamplifier For Wide-Band Fiber Optic Links", Proc. SPIE 0835, Integrated Optical Circuit Engineering V, (10 March 1988); doi: 10.1117/12.942366; https://doi.org/10.1117/12.942366
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