10 March 1988 Proton Implanted Gallium Arsenide Optical Waveguides
Author Affiliations +
Proceedings Volume 0835, Integrated Optical Circuit Engineering V; (1988); doi: 10.1117/12.942330
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States
Abstract
Results of a study of proton implanted gallium arsenide (GaAs) waveguides are presented. The waveguides were made using standard implant equipment available to the microelectronics industry. Protons at energies of 190 Kev were implanted into heavily doped, n-type gallium arsenide. Implant doses were usually at 5E15 per cm2., with water used as the ion source. The implants were performed at room temperature, although some heating of the samples occurred. The main anneals were done at 350°C for 30 minutes. The waveguides were tested at 1.06μm using a YAG II laser. Loss measurements were done as a function of the substrate doping and etch pit density of the samples. Good guides were made using a doping of 3.5E18 cm-3 and etch pit density of 35000 cm-2. Low etch pit densities did not yield acceptable guides using the above fabrication procedures.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Keith A. Ramsey, James R. Busch, Steven Bibyk, George Valco, Mark Mentzer, "Proton Implanted Gallium Arsenide Optical Waveguides", Proc. SPIE 0835, Integrated Optical Circuit Engineering V, (10 March 1988); doi: 10.1117/12.942330; https://doi.org/10.1117/12.942330
PROCEEDINGS
7 PAGES


SHARE
KEYWORDS
Waveguides

Gallium arsenide

Doping

Etching

Ions

Refractive index

Signal attenuation

Back to Top