1 January 1987 Analysis Of Franz-Keldysh Electro-Optic Modulation In InP, GaAs, GaSb, InAs, And InSb
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Proceedings Volume 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects; (1987); doi: 10.1117/12.967524
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States
Abstract
Effective mass theory and zero-field absorption data are used to calculate electric-field-induced changes in optical refraction and absorption (the Franz-Keldysh effect) for five direct gap III-V semiconductors: InP, GaAs, GaSb, InAs, and InSb. Results are given for fields of 104 V/cm to the estimated breakdown strength and for photon energies of 40 and 80 meV below the band gap for each semiconductor.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Brian R. Bennett, Richard A. Soref, "Analysis Of Franz-Keldysh Electro-Optic Modulation In InP, GaAs, GaSb, InAs, And InSb", Proc. SPIE 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects, (1 January 1987); doi: 10.1117/12.967524; https://doi.org/10.1117/12.967524
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KEYWORDS
Absorption

Gallium arsenide

Modulators

Gallium antimonide

Indium arsenide

Modulation

Semiconductors

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