Paper
1 January 1987 Characterization Of GaAlAs Optical Waveguide Heterostructures Grown By Molecular Beam Epitaxy
C. J. Radens, H. E. Jackson, J. T. Boyd, K. B. Bhasin, J. J. Pouch, L. Davis
Author Affiliations +
Proceedings Volume 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects; (1987) https://doi.org/10.1117/12.967529
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States
Abstract
Multiple layer GaA1As optical waveguide heterostructures have been grown by molecular beam epitaxy. These samples were designed to operate at a wavelength of .84 microns with negligible coupling of guided light to the absorbing GaAs substrate. The aluminum concentration was 13% for the guiding layer and was 16% for the cladding layers. The process for growing waveguide layers was calibrated primarily by high energy electron diffraction with the optical quality confirmed by photoluminescence measurements. Channel waveguide structures having widths of 5 microns were etched in a low pressure, magnetically confined, multipolar plasma reactor. The resulting waveguide structures were characterized by Raman spectroscopy, ellipsometry, Auger electron spectroscopy and optical waveguide loss measurements.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. J. Radens, H. E. Jackson, J. T. Boyd, K. B. Bhasin, J. J. Pouch, and L. Davis "Characterization Of GaAlAs Optical Waveguide Heterostructures Grown By Molecular Beam Epitaxy", Proc. SPIE 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects, (1 January 1987); https://doi.org/10.1117/12.967529
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Waveguides

Cladding

Gallium arsenide

Scattering

Channel waveguides

Microscopes

Heterojunctions

Back to Top