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1 January 1987 Effect of Magnetic Quantization on the diffusivity-Mobility Ratio in HgTe-CdTe Superlattices.
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Proceedings Volume 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects; (1987) https://doi.org/10.1117/12.967511
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States
Abstract
The Einstein relation for the diffusivity-mobility ratio of the carriers in semi-conductors (hereinafter referred to as DMR) is a very important one, since the simplest method of analyzing semiconductor devices taking into account the degeneracy of the bands is to use the DMR to express the performance of them at the device terminals and the switching speed in terms of carrier concentration. In recent years, the connection of the DM with the velocity auto-correlation function, its relation with the screening of the carriers in semiconductors and the vario modifications of the DMR in degenerate semiconductors having different types of band structures under varying physical conditions have extensively been investigated in the literature.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Bhattacharyya, K. P. Ghatak, and S. Biswas "Effect of Magnetic Quantization on the diffusivity-Mobility Ratio in HgTe-CdTe Superlattices.", Proc. SPIE 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects, (1 January 1987); https://doi.org/10.1117/12.967511
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