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1 January 1987 Integrated Optic Response To Nuclear Irradiations
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Proceedings Volume 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects; (1987) https://doi.org/10.1117/12.967501
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States
Abstract
Experimental results are presented on LiNb03:Ti integrated optic device response to various nuclear irradiations. The results are compared to earlier studies performed on GaAlAs and LiNb03 and, the importance of various physical effects parameters such as photorefraction and photobleaching are presented for future consideration of studying device responses under varying temperature, optical power and irradiation levels. Data demonstrating the ability of LiNb03:Ti to withstand a gamma and X-ray accumulated dose of 204 Krad (Si) is reported and comparison of the data to a geminate ion recombination kinetic model is presented.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. W. Taylor "Integrated Optic Response To Nuclear Irradiations", Proc. SPIE 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects, (1 January 1987); https://doi.org/10.1117/12.967501
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