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1 January 1987 On The Generalised Carrier Statistics In A3 II B2V Type Of Nonlinear Optical Materials In The Presence Of Crossed Llectric And Maiznetic Fields
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Proceedings Volume 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects; (1987) https://doi.org/10.1117/12.967526
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States
Abstract
In recent years, there has been considerable interest in studying the carrier statistics in nonlinear optical materials made of small gap semiconductors since the various electronic properties and the derivation of different important physical parameters of optoelectronic devices under varying situations are based on the relation between the Quasi-Fermi energy and the carrier concentration in such devices.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Biswas, N. Chattopadhyay, and K P. Ghatak "On The Generalised Carrier Statistics In A3 II B2V Type Of Nonlinear Optical Materials In The Presence Of Crossed Llectric And Maiznetic Fields", Proc. SPIE 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects, (1 January 1987); https://doi.org/10.1117/12.967526
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