Plasma-Etched Polymer Waveguides For Intrachip Optical Interconnects

D. A. Christensen

doi:10.1117/12.967552

Translator Disclaimer

1 January 1987 Plasma-Etched Polymer Waveguides For Intrachip Optical Interconnects

D. A. Christensen

Author Affiliations +

Proceedings Volume 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects; (1987) https://doi.org/10.1117/12.967552
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States

Abstract

Optical intrachip communication offers the potential advantages of high speed and lack of electrical interference. We report on progress made on an interconnect design using GaAs LEDs, polymer waveguides, and photodiodes in a silicon substrate. The polymer waveguides are fabricated in polyimide or polystyrene materials, and are patterned by reactive ion etching with a tri-level resist system. The photodiodes are of two designs, including one in which the depletion layer lies directly below the waveguide. The LEDs are fabricated from GaAs deposited by MOCVD on a Ge lattice-matching layer placed between the GaAs and the silicon substrate. Test results are presented for the individual components.

Citation Download Citation

D. A. Christensen "Plasma-Etched Polymer Waveguides For Intrachip Optical Interconnects", Proc. SPIE 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects, (1 January 1987); https://doi.org/10.1117/12.967552

ACCESS THE FULL ARTICLE