1 January 1987 Properties Of Multiple Quantum Wells And Their Use In High-Speed Detectors And Modulators
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Proceedings Volume 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects; (1987) https://doi.org/10.1117/12.967516
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States
Abstract
Quantum well systems lattice matched to GaAs and InP have emerged as important materials for use in long wavelength optoelectronic devices. Intrinsic problems associated with the growth of these quantum wells by molecular beam epitaxy are discussed and the luminescence properties of state-of-art quantum wells, using novel growth techniques are described. Finally, the properties of detectors, modulators and integrated devices made with these heterojunction materials are described and discussed.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pallab Bhattacharya, "Properties Of Multiple Quantum Wells And Their Use In High-Speed Detectors And Modulators", Proc. SPIE 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects, (1 January 1987); doi: 10.1117/12.967516; https://doi.org/10.1117/12.967516
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