1 January 1987 Radiation Effects On Gallium Arsenide Integrated Optical Devices
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Proceedings Volume 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects; (1987) https://doi.org/10.1117/12.967502
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States
Abstract
We discuss gallium arsenide integrated optical devices for high speed diagnostic systems. Specifically, we focus on the effect of radiation exposure on the performance characteristics of these devices.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. McWright, G. McWright, M. Lowry, M. Lowry, F. Roeske, F. Roeske, E. Takeuchi, E. Takeuchi, W. Tindall, W. Tindall, G. Murphy, G. Murphy, } "Radiation Effects On Gallium Arsenide Integrated Optical Devices", Proc. SPIE 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects, (1 January 1987); doi: 10.1117/12.967502; https://doi.org/10.1117/12.967502
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