1 January 1987 Testing Of VLSI Devices Using Electro-Optic Effects In Silicon
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Proceedings Volume 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects; (1987) https://doi.org/10.1117/12.967521
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States
Abstract
The Kramers-Kronig relations have been used to determine the change in index of refraction for crystalline Silicon (Si) from absorption data. The Franz-Keldysh effect and the presence of free carriers both have an effect on the index of refraction of the pn junction diode. The results have been used to predict the sensitivity of a technique for measuring on-chip voltages in VLSI devices. A difference in sensitivity for PMOS and NMOS on a single substrate is calculated, in contrast to the simple theoretical result.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gregory N. Koskowich, Gregory N. Koskowich, Mani Soma, Mani Soma, } "Testing Of VLSI Devices Using Electro-Optic Effects In Silicon", Proc. SPIE 0836, Optoelectronic Materials, Devices, Packaging, and Interconnects, (1 January 1987); doi: 10.1117/12.967521; https://doi.org/10.1117/12.967521
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