4 February 1988 Avalanche Photodiodes For High-Bit-Rate Lightwave Systems
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Proceedings Volume 0839, Components for Fiber Optic Applications II; (1988); doi: 10.1117/12.942557
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States
Abstract
Avalanche photodiodes (APDs) capable of providing useful gain at microwave frequencies are vital components for future multi-gigabit/s lightwave transmission systems. To date, the APD structure that has shown the most promise for high frequency operation consists of a wide-bandgap multiplication region and a narrow-bandgap absorbing layer separated by a transition region to reduce charge accumulation at the heterojunction interfaces (SAGM-APD). InP/InGaAsP/InGaAs APDs of this type have exhibited bandwidths as high as 8 GHz and gain-bandwidth products of 70 GHz. In this paper we discus the physical effects that determine their speed and project performance limits.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. C. Campbell, "Avalanche Photodiodes For High-Bit-Rate Lightwave Systems", Proc. SPIE 0839, Components for Fiber Optic Applications II, (4 February 1988); doi: 10.1117/12.942557; https://doi.org/10.1117/12.942557
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KEYWORDS
Avalanche photodetectors

Indium gallium arsenide

Absorption

Quantum efficiency

Receivers

Photodetectors

Heterojunctions

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