4 February 1988 Detectors For Monolithic Optoelectronics
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Proceedings Volume 0839, Components for Fiber Optic Applications II; (1988) https://doi.org/10.1117/12.942561
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States
In this paper, we present data on the electrical characteristics and the optical response of photodetectors integrated on GaAs substrates with FET devices. We compare the differences between devices fabricated on globally implanted areas versus the undoped semi-insulating regions of the same wafer.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. J. Jackson, D. J. Jackson, J. Y. Josefowicz, J. Y. Josefowicz, D. B . Rensch, D. B . Rensch, D. L. Persechini, D. L. Persechini, } "Detectors For Monolithic Optoelectronics", Proc. SPIE 0839, Components for Fiber Optic Applications II, (4 February 1988); doi: 10.1117/12.942561; https://doi.org/10.1117/12.942561

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