Planar InGaAs/InP APD Fabrication Using Silicon Implantation And Regrowth Techniques

P. P. Webb; R. J. McIntyre; M. Holunga; T. Vanderwel

doi:10.1117/12.942559

4 February 1988 Planar InGaAs/InP APD Fabrication Using Silicon Implantation And Regrowth Techniques

P. P. Webb, R. J. McIntyre, M. Holunga, T. Vanderwel

Proceedings Volume 0839, Components for Fiber Optic Applications II; (1988) https://doi.org/10.1117/12.942559
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States

Abstract

Planar InGaAs/InP APD's having a SAM structure have been fabricated making use of ion implantation of silicon as the n-type source for achieving multiplication in the InP region. Quantum efficiencies greater than 80% and gains greater than 50 have been achieved. Noise measurements indicate multiplied bulk dark currents less than 1 nA for a device of diameter 50 micrometers. For certain conditions of the fabrication parameters, response times less than 1 ns are achieved without the use of an intermediate quaternary layer between the InGaAs and InP regions.

Citation Download Citation

P. P. Webb, R. J. McIntyre, M. Holunga, and T. Vanderwel "Planar InGaAs/InP APD Fabrication Using Silicon Implantation And Regrowth Techniques", Proc. SPIE 0839, Components for Fiber Optic Applications II, (4 February 1988); https://doi.org/10.1117/12.942559

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available