Translator Disclaimer
16 May 1988 Electric-Field-Induced Refractive Index Change In Gainasp/Inp Mqw Structures
Author Affiliations +
Proceedings Volume 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics; (1988) https://doi.org/10.1117/12.943402
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France
Abstract
Large change in the field induced refractive index is achievable by the use of the MQW structures. The property of which can be advantageously utilized to realize high speed external modulators and switches. The GalnAsP/InP MQW structures was prepared by LPE method and the electric field induced absorption was measured. Reflection of light due to refractive index change as well as absorption coefficient change was observed for the first time. Intersectional optical switch based on this change was also fabricated.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazuhiko Shimomura, K. G. Ravikumar, Tomoyuki Kikugawa, Shigehisa Arai, and Yasuharu Suematsu "Electric-Field-Induced Refractive Index Change In Gainasp/Inp Mqw Structures", Proc. SPIE 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics, (16 May 1988); https://doi.org/10.1117/12.943402
PROCEEDINGS
7 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT


Back to Top