16 May 1988 Electroluminescence From A Short Asymmetric GaAs/AlAs Superlattice
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Proceedings Volume 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics; (1988); doi: 10.1117/12.943410
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France
The electronic states of a short asymmetric GaAs/AlAs superlattice have been studied by monitoring the optical transitions involving the superlattice resonances of such a structure embedded in a GaAs p-n junction. Three electroluminescence features arise which involve the superlattice states, one very strongly dependent on the bias applied to the p-n junction. The intensity of the emission involving superlattice states increases relative to that from the bulk when a region of negative differential resistance in the I-V characteristic is crossed. Photoconductivity measurements show four main features, three of which can be associated with the emission. Field dependences of these transitions are presented, and some initial conclusions drawn concerning the nature of the electronic states involved.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
R. T. Phillips, N. R. Couch, "Electroluminescence From A Short Asymmetric GaAs/AlAs Superlattice", Proc. SPIE 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics, (16 May 1988); doi: 10.1117/12.943410; https://doi.org/10.1117/12.943410



Gallium arsenide

Quantum wells


Optoelectronic devices

Integrated optics

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