16 May 1988 Gaalas MBE Quantum Well Laser With Low Threshold Current Modelling And Experiment
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Proceedings Volume 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics; (1988) https://doi.org/10.1117/12.943406
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France
Abstract
A model for the determination of the threshold current of quantum well laser is presented, using a no-k-selection rule for the gain calculation and taking into consideration propaga-tion and confinement properties of the waveguide. A graded refractive index separate confinement heterostructure (GRIN-SCH) was fabricated by molecular beam epitaxy. Threshold currents of 11 mA are obtained on ridg (3 x 200 4m) devices from a wafer for which the broad area threshold density is 380 A/cm2. Gain measurements performed on these lasers show the good fit between experimental spectra and theoretical spectra obtained with the model.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B Saint-Cricq, F Chatenoud, N Fabre, F Lozes-Dupuy, G Vassilieff, "Gaalas MBE Quantum Well Laser With Low Threshold Current Modelling And Experiment", Proc. SPIE 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics, (16 May 1988); doi: 10.1117/12.943406; https://doi.org/10.1117/12.943406
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