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16 May 1988 Heterostructures Of Lattice Mismatched Semiconductors: Fundamental Aspects And Device Perspectives
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Proceedings Volume 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics; (1988) https://doi.org/10.1117/12.943413
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France
Abstract
We examine the structural and electronic properties of heterostructures grown out of lattice mismatched III-V compound semiconductors, with emphasis on their ability to serve as reliable materials for device applications. We also give a brief review of the most striking experimental results reported in the literature, in order to illustrate the diversity of interesting and specific features displayed by thin biaxially strained layers.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul Voisin "Heterostructures Of Lattice Mismatched Semiconductors: Fundamental Aspects And Device Perspectives", Proc. SPIE 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics, (16 May 1988); https://doi.org/10.1117/12.943413
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