16 May 1988 Low Pressure MOCVD Of Uniform InP/GaInAs And GaInAsP Superlattice Structures And Quantum Wells For Optoelectronic Applications
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Proceedings Volume 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics; (1988) https://doi.org/10.1117/12.943420
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France
Abstract
GaInAs/InP and GaInAsP/InP structures have been grown at conditions optimized for laser fabrication. Across 2" wafers a homogeneity in thickness, composition and doping was achieved to better than 2 % at a total pressure of 20 mbar and high gas flow rates. The abruptness of the transition for quantum wells ranging from 0.5 to 50 nm in width is on the monolayer level. Photoluminescence line shifts (2K) are among the highest observed so far (max. 528 meV); the line widths are very small (i.e. 2.2 meV for 20 nm wells).
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Holger Jurgensen, "Low Pressure MOCVD Of Uniform InP/GaInAs And GaInAsP Superlattice Structures And Quantum Wells For Optoelectronic Applications", Proc. SPIE 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics, (16 May 1988); doi: 10.1117/12.943420; https://doi.org/10.1117/12.943420
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