16 May 1988 Planar Integration Of Linear And Nonlinear III-V MOW Optical Comppnents
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Proceedings Volume 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics; (1988) https://doi.org/10.1117/12.943418
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France
Abstract
The recent development of optoelectronic devices based on quantum wells should permit monolithic integration of active and passive optical components within the same epitaxial layers. A planar process using multiple quantum well (MQW) layers to realise this objective is described. Nonlinear optical processes will be present in such structures, and their significance is discussed. Carrier lifetime measurements performed on GaAs/AlGaAs multiple quantum well structures are reported.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John H. Marsh, "Planar Integration Of Linear And Nonlinear III-V MOW Optical Comppnents", Proc. SPIE 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics, (16 May 1988); doi: 10.1117/12.943418; https://doi.org/10.1117/12.943418
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