16 May 1988 Ultrawide Band Light Emitters By Means Of Quantum Confined Field Effects
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Proceedings Volume 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics; (1988) https://doi.org/10.1117/12.943408
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France
Abstract
High speed photoluminescence (PL) switching by electric field-induced carrier separation inside the Quantum Well (QW) at room temperature, combined with carrier escaping out from the well to the barrier layers is demonstrated to be free from carrier life time limitation. A new technique for evaluating radiative lifetime separated from over-all life time is also shown. Based on the experimental data, possible device structures with functions of carrier-injection and of field control for practical application will be discussed.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ichiro Ogura, Masamichi Yamanishi, Yasuo Kan, Ikuo Suemune, "Ultrawide Band Light Emitters By Means Of Quantum Confined Field Effects", Proc. SPIE 0861, Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics, (16 May 1988); doi: 10.1117/12.943408; https://doi.org/10.1117/12.943408
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