2 June 1988 Optical Properties And Non Linearities In Multiple Quantum Well Structures
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Proceedings Volume 0864, Advanced Optoelectronic Technology; (1988) https://doi.org/10.1117/12.943530
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France
The quantum well structures in semiconductor dominate many important application areas. Laser, loss modulator, optical bistable device, intersectionnal total reflection switch with high speed switching capabilities have been demonstrated. Polarization dependent absorption in waveguide structures, non linear transmission and voltage dependent absorption coefficient are investigated as a function of wavelength and quantum well structures. Results for GaAs/GaAlAs and InGaAs/InP Multiple Quantum Wells (MQW) structures are presented. Various device applications based on waveguide and 2D configurations are discussed.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J P Pocholle, J P Pocholle, M Razeghi, M Razeghi, J P Hirtz, J P Hirtz, J P Schnell, J P Schnell, J Raffy, J Raffy, B Guyon, B Guyon, M Papuchon, M Papuchon, C Puech, C Puech, P Dandria, P Dandria, H Vanderstichel, H Vanderstichel, "Optical Properties And Non Linearities In Multiple Quantum Well Structures", Proc. SPIE 0864, Advanced Optoelectronic Technology, (2 June 1988); doi: 10.1117/12.943530; https://doi.org/10.1117/12.943530

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