2 June 1988 Photorefractive Effect In Gaas And Inp In The Nanosecond Regime
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Proceedings Volume 0864, Advanced Optoelectronic Technology; (1988) https://doi.org/10.1117/12.943524
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France
Abstract
The photorefractive effect in 43 m crystals shows specific symmetries in its dependence upon wave polarizations and crystal orientation. We summarize them and use them to study the energy dependence of the photorefractive two-beam mixing in semi-insulating gallium arsenide and indium phosphide in the nanosecond regime at 1.06 μm.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J C Fabre, J.M. C Jonathan, G Roosen, "Photorefractive Effect In Gaas And Inp In The Nanosecond Regime", Proc. SPIE 0864, Advanced Optoelectronic Technology, (2 June 1988); doi: 10.1117/12.943524; https://doi.org/10.1117/12.943524
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