3 May 1988 Growth And Characterization Of LPE CdHgTe/CdZnTe/CdZnTe Structure
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Proceedings Volume 0865, Focal Plane Arrays: Technology and Applications; (1988) https://doi.org/10.1117/12.943540
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France
Abstract
The liquid phase epitaxial technique is used to grow Hgl_x Cdx Te (x = .23) from a Te - rich solution onto a Cdl_y ZnyTe (y = .04) buffer layer grown from a Te-rich solution onto a Cdi_yZnyTe bulk substrate in an open tube multibin horizontal slider apparatus.Growth conditions and physical characterizations of both the buffer layer and the CdHgTe layer are given ; electrical properties of the CdHgTe layer are also presen-ted. PV detectors were successfully obtained on such a structure using an ion-implanted technology and their characteristics at 77 K for a 10.1 ,um cut-off wavelength are given.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
B Pelliciari, J P Chamonal, G L Destefanis, L Dicioccio, "Growth And Characterization Of LPE CdHgTe/CdZnTe/CdZnTe Structure", Proc. SPIE 0865, Focal Plane Arrays: Technology and Applications, (3 May 1988); doi: 10.1117/12.943540; https://doi.org/10.1117/12.943540
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