Paper
3 May 1988 The "Random Access Memory" Concept Applied To The Infrared Focal Plane
L Audaire, J Cluzel, D Marion, P Nicolas, P Pantigny
Author Affiliations +
Proceedings Volume 0865, Focal Plane Arrays: Technology and Applications; (1988) https://doi.org/10.1117/12.943544
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France
Abstract
The circuit presented in this paper associates the classical direct injection and integration for each pixel with a random access scanning for the array. This focal plane implementation has two major advantages : i - the design of the pixel allows a larger integration capacitance in the 70 m pitch. ii - in the large arrays, the random access addressing mode allows the selection of sub-pictures for signal processing. The device is described. Performances of 32*32 pixels 70 m pitch circuits hybridized to CMT diodes arrays (cut-off wavelength : 5.5 and 10.1 m) are presented.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L Audaire, J Cluzel, D Marion, P Nicolas, and P Pantigny "The "Random Access Memory" Concept Applied To The Infrared Focal Plane", Proc. SPIE 0865, Focal Plane Arrays: Technology and Applications, (3 May 1988); https://doi.org/10.1117/12.943544
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Cited by 2 scholarly publications and 1 patent.
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KEYWORDS
Capacitors

Charge-coupled devices

Curium

Time multiplexed optical shutter

Sensors

Staring arrays

Capacitance

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