InP Passivation By Plasma HF Enhanced Sulphidation Duality Between The Growth And Ionic Bombardment Mechanisms Of The Sulphide Layer

J Durand; M Gendry; L Cot

doi:10.1117/12.943577

1 January 1987 InP Passivation By Plasma HF Enhanced Sulphidation Duality Between The Growth And Ionic Bombardment Mechanisms Of The Sulphide Layer

J Durand, M Gendry, L Cot

Author Affiliations +

Proceedings Volume 0866, Materials and Technologies for Optical Communications; (1987) https://doi.org/10.1117/12.943577
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France

Abstract

The HF plasma enhanced sulphidation is used, as a low temperature alternative of passivation of the InP surface for the elaboration of the gate insulator in MISFET-InP. The species (atom, radical, ion) present in the H2S glow discharge and the potential repartition in a HF plasma, capacitive type with internal electrodes, are described. We comment models of the sulphide layers with composition and surface and interface roughness resulting of XPS Spectroscopy, Spectroscopic Ellipsometry ang Grazing X Ray Reflectrometry. We give a growth mechanism of the sulphide layer and we show the duality between the growth and ionic bombardment mechanisms of a growing layer in HF plasma.

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J Durand, M Gendry, and L Cot "InP Passivation By Plasma HF Enhanced Sulphidation Duality Between The Growth And Ionic Bombardment Mechanisms Of The Sulphide Layer", Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); https://doi.org/10.1117/12.943577

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