1 January 1987 Molecular Beam Epitaxy Of AlGaInAs For Optoelectronics
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Proceedings Volume 0866, Materials and Technologies for Optical Communications; (1987) https://doi.org/10.1117/12.943571
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France
Abstract
In this paper, we first describe the molecular beam epitaxial (MBE) growth procedure of AlGaInAs lattice-matche to InP. Next, we present the electrical and optical properties of this system in the whole range of compositions. We then compare these results with those of the more familiar GaInAsP/InP system.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J P Praseuth, J P Praseuth, M Quillec, M Quillec, J M Gerard, J M Gerard, } "Molecular Beam Epitaxy Of AlGaInAs For Optoelectronics", Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); doi: 10.1117/12.943571; https://doi.org/10.1117/12.943571
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