1 January 1987 Optimization Of Ion Implantation Technique In Manufacturing HgCdTe Devices For Fiber Optics Communications
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Proceedings Volume 0866, Materials and Technologies for Optical Communications; (1987) https://doi.org/10.1117/12.943590
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France
Abstract
Hgl-x Cdx Te is a good candidate for signal transmission through fiber optics for it has an adjustable direct band gap (x ~ 0.7 for silica glass and x~ 0.4 for fluorine glass). Photovoltaic detectors can be made by implantation on a p-type substrate. However the physical nature of the junction is not yet clearly understood. We implanted various ions (Al, Xe, Kr) at different energies, (60 3 keV to 320 keV) and temperatures (15 K, 300 K) in p-type bulk Hg 0.3 Cd 0.7 Te (p~ 1.5 x 10 16/cm3). From E.B.I.C. and differential Hall measurements, we conclude that Hg inferstitials should be the most realistic candidates as doping defects.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C Blanchard, J F Barbot, J C Desoyer, D Le Scoul, J L Dessus, A Durand, "Optimization Of Ion Implantation Technique In Manufacturing HgCdTe Devices For Fiber Optics Communications", Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); doi: 10.1117/12.943590; https://doi.org/10.1117/12.943590
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