1 January 1987 Recent Results In Semi-Insulating Indium Phosphide Crystal Growth
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Proceedings Volume 0866, Materials and Technologies for Optical Communications; (1987) https://doi.org/10.1117/12.943566
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France
Abstract
Dislocation content and thermal stability are improved by codoping iron doped semi-insulating (SI) InP with isoelectronic impurities. By using 3d impurities (Ti or Cr) as deep compensating donors, new SI InP have been grown. The thermal stability of Ti doped InP will be shown to be superior to that of Fe or Cr doped InP.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Y Toudic, Y Toudic, R Coquille, R Coquille, M Gauneau, M Gauneau, G Grandpierre, G Grandpierre, B Lambert, B Lambert, } "Recent Results In Semi-Insulating Indium Phosphide Crystal Growth", Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); doi: 10.1117/12.943566; https://doi.org/10.1117/12.943566
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